features diffused junction glass passivated chip junction high current capability high reliability high surge current capability mechanical data case:jedec r-1,molded plastic terminals: axial lead ,solderable per mil- std-202,method 208 polarity: color band denotes cathode weight: 0.007 ounces,0.20 grams mounting position: any ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. units maximum recurrent peak reverse voltage v rrm 200 300 400 600 800 1000 v max imum rms v oltage v rms 140 210 280 420 560 700 v maximum dc blocking voltage v dc 200 300 400 600 800 1000 v maximum average forw ard rectif ied current 9.5mm lead length, @t a =75 peak f orw ard surge current 8.3ms single half -sine-w ave superimposed on rated load @t j =125 maximum instantaneous f orw ard voltage @ 1.0 a v f v maximum reverse current @t a =25 at rated dc blocking voltage @t a =100 maximum r e v e r s e r e c o v e ry t i m e ( n o t e 1 ) t rr ns typical junction capacitance (note2) c j pf typical thermal resistance (note3) r ja /w operating junction temperature range t j storage temperature range t stg 60 - 55 ---- + 150 15 50 100 100 50 1.3 20 50 35 70 100.0 r - 1 m ax i m u m r at i n g s an d e l e c t r i c al c h ar ac t e r i s t i c s 1.0 1h 1g - - - 1h8 g a 5.0 i f(av) 1.0 h i g h eff i c i e n cy r e c t i f i e r s 70 voltage range: 50 --- 1000 v cu r r e n t : 1 . 0 a 3. thermal resistance from junction to ambient. a 30 . 0 i fsm note: 1. measured with i f =0.5a, i r =1a, i rr =0.25a. i r a 2. measured at 1.0mh z and applied rev erse v oltage of 4.0v dc. 1.7 - 55 ---- + 150 1H1G 1h2g 1h3g 1h4g 1h5g 1h6g 1h7g 1h8g dimensions in millimeters www.diode.kr diode semiconductor korea
0.25 0 25 50 75 1 0 0 1 2 5 1 5 0 1 7 5 0.5 0.75 1.0 single phase half wave 60h z resistive or inductive load amperes amperes amperes junction capacitance,pf notes:1.rise time = 7ns max.input impedance = 1m .22pf. jjjjj 2.rise time =10ns max.source impedance=50 . instantaneous forward voltage, volts instantaneous forward current 1h1 g - - - 1h8 g fig.1 -- test circuit diagram and reverse recovery time characteristic average forward current set time base for 20/30 ns/cm fig.2 -- typical forward characteristic fig.3 -- forward derating curve fig.4 -- typical junction capacitance fig.5 -- peak forward surge current ambient temperature, peak forward surge current number of cycles at 60hz reverse voltage,volts pulse generator (note2) d.u.t. 1 nonin- ductive 50 n 1. 10 n1. oscilloscope (note 1) (+) 25vdc (approx) (-) t rr - 1 . 0 a - 0 . 25a 0 + 0 . 5 a 1cm 1 10 0 . 1 10 1 0 0 200 2 4 6 20 40 60 100 0 . 2 0 . 4 1 2 4 20 40 t j =25 ?? 1h1 g -1h5 g 1h6 g -1h8 g 1h1 g -1h3 g 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 0.01 0.1 1.0 10 t j =25 pulse width=300 12 0 12 6 24 1 8 30 41 0 20 1 0 0 40 t j =125 8.3ms single half sine-wave diode semiconductor korea www.diode.kr
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